1 features ? rectangular led rf performance ? 450 & 460 nm ? tr-21? C 21 mw min. C 527 nm ? tr-06? - 6 mw min. ? epoxy die attach ? low forward voltage - 3.3 v typical at 20 ma ? 1000-v esd threshold rating ? ingan junction on thermally conductive sic substrate applications ? mobile backlighting C 0.8 mm, 0.6 mm & 0.4 mm sideview packages ? mobile appliances ? digital cameras ? car navigation systems ? lcd backlighting C 0.8 mm, 0.6 mm & 0.4 mm sideview packages ? portable pcs ? monitors ? led video displays cree ? tr2227? leds data sheet c xxx tr2227-s xx 00 crees tr? leds are the newest generation of solid-state led emitters that combine highly effcient ingan materials with crees proprietary device technology and silicon carbide substrates to deliver superior value for the lcd sideview market. the tr leds are among the brightest in the sideview market while delivering a low forward voltage resulting in a very bright and highly effcient solution for the 0.4-mm, 0.6-mm and 0.8-mm sideview market. the design is optimally suited for industry standard sideview packages as it is die attachable with clear epoxy and has two top contacts, consistent with industry standard packaging. c xxx tr2227-s xx 00 chip diagram top view bottom view die cross section d a t a s h e e t : c p r 3 e f r e v a cathode (-) 80 x 80 m 220 x 270 m backside t = 50 m bottom surface 190 x 240 m anode (+) 80 m junction 230 x 190 m subject to change without notice. www.cree.com
copyright ? 2010 cree, inc. all rights reserved. the information in this document is subject to change without notice. cree and the cree logo are registered trademarks, and tr and tr2227 are trademarks of cree, inc. 2 cpr3ef rev a cree, inc. 4600 silicon drive durham, nc 27703 usa tel: +1.919.313.5300 www.cree.com maximum ratings at t a = 25c notes 1&3 c xxx tr2227-s xx 00 dc forward current 30 ma peak forward current (1/10 duty cycle @ 1 khz) 70 ma led junction temperature 125c reverse voltage 5 v operating temperature range -40c to +100c storage temperature range -40c to +100c electrostatic discharge threshold (hbm) note 2 1000 v electrostatic discharge classifcation (mil-std-883e) note 2 class 2 typical electrical/optical characteristics at t a = 25c, if = 20 ma note 3 part number forward voltage (v f , v) reverse current [i(vr=5v), a] full width half max ( d , nm) min. typ. max. max. typ. c450tr2227-s xx 00 2.7 3.3 3.7 2 20 c460tr2227-s xx 00 2.7 3.3 3.7 2 21 c527tr2227-s xx 00 2.9 3.4 3.9 2 34 mechanical specifcations c xxx tr2227-s xx 00 description dimension tolerance p-n junction area (m) 190 x 230 35 chip area (m) 220 x 270 35 chip thickness (m) 50 15 au bond pad diameter anode (m) 80 -5, +15 au bond pad thicknesses (m) 1.0 0.5 au bond pad area cathode (m) 80 x 80 -5, +15 bottom area (m) 190 x 240 35 notes: 1. maximum ratings are package-dependent. the above ratings were determined using a t-1 3/4 package (with hysol os4000 epoxy) for characterization. ratings for other packages may differ. the forward currents (dc and peak) are not limited by the die but by the effect of the led junction temperature on the package. the junction temperature limit of 125c is a limit of the t-1 3/4 package; junction temperature should be characterized in a specifc package to determine limitations. assembly processing temperature must not exceed 325c (< 5 seconds). 2. product resistance to electrostatic discharge (esd) according to the hbm is measured by simulating esd using a rapid avalanche energy test (raet). the raet procedures are designed to approximate the maximum esd ratings shown. the raet procedure is performed on each die. the esd classifcation of class 2 is based on sample testing according to mil-std-883e. 3. all products conform to the listed minimum and maximum specifcations for electrical and optical characteristics when assembled and operated at 20 ma within the maximum ratings shown above. effciency decreases at higher currents. typical values given are within the range of average values expected by manufacturer in large quantities and are provided for information only. all measurements were made using lamps in t-1 3/4 packages (with hysol os4000 epoxy). optical characteristics measured in an integrating sphere using illuminance e. 4. specifcations are subject to change without notice.
copyright ? 2010 cree, inc. all rights reserved. the information in this document is subject to change without notice. cree and the cree logo are registered trademarks, and tr and tr2227 are trademarks of cree, inc. 3 cpr3ef rev a cree, inc. 4600 silicon drive durham, nc 27703 usa tel: +1.919.313.5300 www.cree.com standard bins for c xxx tr2227-s xx 00 led chips are sorted to the radiant flux and dominant wavelength bins shown. a sorted die sheet contains die from only one bin. sorted die kit (CXXXTR2227-SXX00) orders may be flled with any or all bins (cxxxtr2227-xxxx) contained in the kit. all radiant flux (rf) values and all dominant wavelength values shown are specifed at if = 20 ma. tr 450 nm kits tr 460 nm kits tr 527 nm kits tr-21 c450tr2227-s2100 c450tr2227-0213 c450tr2227-0214 c450tr2227-0215 c450tr2227-0216 c450tr2227-0209 c450tr2227-0210 c450tr2227-0211 c450tr2227-0212 c450tr2227-0205 c450tr2227-0206 c450tr2227-0207 c450tr2227-0208 dominant wavelength 447.5 nm 450 nm 452.5 nm 445 nm 455 nm 27.0 mw 24.0 mw 21.0 mw radiant flux tr-21 c460tr2227-s2100 c460tr2227-0213 c460tr2227-0214 c460tr2227-0215 c460tr2227-0216 c460tr2227-0209 c460tr2227-0210 c460tr2227-0211 c460tr2227-0212 c460tr2227-0205 c460tr2227-0206 c460tr2227-0207 c460tr2227-0208 dominant wavelength 457.5 nm 460 nm 462.5 nm 455 nm 465 nm 27.0 mw 24.0 mw 21.0 mw radiant flux c527tr2227-s0600 c527tr2227-0213 c527tr2227-0214 c527tr2227-0215 c527tr2227-0210 c527tr2227-0211 c527tr2227-0212 c527tr2227-0207 c527tr2227-0208 c527tr2227-0209 c527tr2227-0204 c527tr2227-0205 c527tr2227-0206 c527tr2227-0201 c527tr2227-0202 c527tr2227-0203 dominant wavelength 525 nm 530 nm 535 nm 520 nm 10.0 mw 9.0 mw 8.0 mw 7.0 mw 6.0 mw radiant flux tr-06
copyright ? 2010 cree, inc. all rights reserved. the information in this document is subject to change without notice. cree and the cree logo are registered trademarks, and tr and tr2227 are trademarks of cree, inc. 4 cpr3ef rev a cree, inc. 4600 silicon drive durham, nc 27703 usa tel: +1.919.313.5300 www.cree.com characteristic curves these are representative measurements for the tr led product. actual curves will vary slightly for the various radiant fux and dominant wavelength bins. 0% 25% 50% 75% 100% 125% 150% 0 5 10 15 20 25 30 relative light intensity if (ma) relative intensity vs. forward current - 4 - 2 0 2 4 6 8 10 12 14 0 5 10 15 20 25 30 dominant wavelength shift (nm) if (ma) wavelength shift vs. forward current 0% 25% 50% 75% 100% 125% 150% 0 5 10 15 20 25 30 relative light intensity if (ma) relative intensity vs. forward current -4 -2 0 2 4 6 8 10 12 14 0 5 10 15 20 25 30 dominant wavelength shift (nm) if (ma) wavelength shift vs. forward current 0 5 10 15 20 25 30 0 1 2 3 4 5 if (ma) vf (v) forward current vs. forward voltage 0% 20% 40% 60% 80% 100% 300 350 400 450 500 550 600 650 700 relative light intensity wavelength relative intensity vs. wavelength 0 5 10 15 20 25 30 0 1 2 3 4 5 if (ma) vf (v) forward current vs. forward voltage 0% 20% 40% 60% 80% 100% 300 350 400 450 500 550 600 650 700 relative light intensity wavelength relative intensity vs. wavelength
copyright ? 2010 cree, inc. all rights reserved. the information in this document is subject to change without notice. cree and the cree logo are registered trademarks, and tr and tr2227 are trademarks of cree, inc. 5 cpr3ef rev a cree, inc. 4600 silicon drive durham, nc 27703 usa tel: +1.919.313.5300 www.cree.com radiation pattern this is a representative radiation pattern for the tr led product. actual patterns will vary slightly for each chip.
|
